The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 287-291
- https://doi.org/10.1016/s0022-0248(96)00590-8
Abstract
No abstract availableKeywords
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