Multiple Functionality in Nanotube Transistors

Preprint

21 May 2002

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0205445

Abstract

Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions. At larger gate voltages, channel inversion leads to resonant tunneling through an electrostatically defined nanoscale quantum dot. Thus the transistor becomes a gated resonant tunelling device, with negative differential resistance at a tunable threshold. For the dimensions considered here, the device operates in the Coulomb blockade regime, even at room temperature.

Keywords

TRANSISTORS CALCULATIONS
FIELD EFFECT TRANSISTOR
MULTIPLE FUNCTIONALITY
NANOTUBE TRANSISTOR
QUANTUM TRANSPORT
CARBON NANOTUBE
QUANTUM DOT
NANOSCALE
COULOMB

All Related Versions

Version 1, 2002-05-21, ArXiv
Published version: Physical Review Letters, 88 (25), 258302.

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