Thermal index changes by optical absorption in group III-V semiconductor waveguides
- 1 October 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 4 (10) , 1482-1493
- https://doi.org/10.1109/jlt.1986.1074658
Abstract
Large fast-relaxing intensity-dependent refractive index changes would make certain all-optical signal processing devices in waveguides feasible. In III-V compound materials, light-induced index changes can arise from any of several physical mechanisms which have different strengths and relaxation times. Index changes from 1.06-μm pulsed and CW Nd: YAG laser excitation were measured in single-mode low-loss InP and GaAs waveguide Fabry-Perot structures. The dominant effect was found to be due to heating of the waveguide volume which accompanies an extremely small amount of free-carrier absorption.Keywords
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