Microwave characteristics of a carbon-doped base InP/InGaAs heterojunction bipolar transistor grown by chemical beam epitaxy
- 14 October 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (21) , 1893-1894
- https://doi.org/10.1049/el:19931260
Abstract
The first high-speed operation of an InP/In0.53Ga0.47As heterojunction bipolar transistor (HBT) using a highly carbon-doped base is reported. A base carrier concentration of 7 ×1019/cm3 was achieved by chemical beam epitaxy (CBE). To the authors' knowledge, this is the highest doping level reported using carbon. The fT and fmax of the HBT with two 1.5 × 15μm2 emitter fingers were 115GHz and 51GHz, respectively, at IC = 60mA and VCE = 2.0V. These results indicate the significant potential of highly carbon-doped-base InP/InGaAs HBTs for high-speed applications.Keywords
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