Light emission from silicon-rich nitride nanostructures
- 1 May 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (18) , 183103
- https://doi.org/10.1063/1.2191956
Abstract
Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced chemical vapor deposition followed by low temperature annealing. The optical properties of SRN films were studied by micro-Raman and photoluminescence spectroscopy and indicate the presence of small Si clusters characterized by broad near-infrared emission, large absorption/emission Stokes shift, and nanosecond recombination. Our results are supported by first-principles simulations indicating that N atoms bonded to the surface of nanometer Si clusters play a crucial role in the emission mechanism of SRN films. Light emission from SRN systems can provide alternative routes towards the fabrication of optically active Si devices.
Keywords
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