Lithium-Doped Gallium Arsenide Tunnel Diodes
- 1 October 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (10) , 3050-3051
- https://doi.org/10.1063/1.1713161
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Degradation in Zinc-Doped GaAs Tunnel DiodesJournal of Applied Physics, 1964
- Diffusion, Solubility, and Electrical Behavior of Li in GaAs Single CrystalsJournal of Applied Physics, 1962
- Electrical Properties of Li in GaAsJournal of Applied Physics, 1962
- Degenerate Germanium. II. Band Gap and Carrier RecombinationPhysical Review B, 1961
- On the Secondary Tunnelling Phenomena in a p-n Junction of Gallium ArsenideJournal of the Physics Society Japan, 1961
- Gallium-Arsenide Tunnel DiodesProceedings of the IRE, 1960
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960