Localization and Electron-Electron Interaction Effects in Submicron-Width Inversion Layers
- 29 November 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 49 (22) , 1674-1677
- https://doi.org/10.1103/physrevlett.49.1674
Abstract
The localization and electron-electron interaction parts of the small conductivity variation with temperature have been extracted from data obtained on narrow field-effect transistors. One-dimensional behavior is observed and is compared with measurements on the two-dimensional region of the test samples. Magnetoconductance which selectively removes the localization part of the resistance has allowed a theoretical interpretation of the total temperature dependence.Keywords
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