Self-aligned metal/IDP Si bipolar technology featuring 14 ps/70 GHz
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 699-702
- https://doi.org/10.1109/iedm.1995.499315
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Fully Radiative Current Path Structure (FRACS) for sub-0.1 μm emitter transistorIEEE Transactions on Electron Devices, 1995
- APCVD-grown self-aligned SiGe-base HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993