Coulomb scattering model for ultrathin silicon-on-insulator inversion layers
- 20 May 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (20) , 3835-3837
- https://doi.org/10.1063/1.1477623
Abstract
A Coulomb scattering model for ultrathin silicon-on-insulator inversion layers has been developed. This model simultaneously takes into account (i) screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution, (iv) the charged center correlation, and (v) the effect of image charges. We have used this model in a Monte Carlo simulator for single-gate silicon-on-insulator inversion layers and have calculated electron mobility curves in these devices taking into account phonon, surface roughness and Coulomb scattering for different values of the silicon slab thickness sandwiched between the two oxide layers.Keywords
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