Laser ablation preparation and property of bismuth-layer-structured SrBi2Ta2Ta2O9 and Bi4Ti3O12 ferroelectric thin films
- 1 October 1996
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 12 (2) , 225-232
- https://doi.org/10.1080/10584589608013065
Abstract
Bismuth-layer-structured ferroelectric thin films, SrBi2Ta2O9 and Bi4Ti3O12, have been prepared by laser ablation method on both Pt sheets and Si wafers at low temperatures of 400 ∼ 500°C. These thin films have been characterized by XRD, XPS, AFM, C-V, D-E hysteresis and J-V measurement. SrBi2Ta2O9 thin films have a good (105) preferential orientation, and Bi4Ti3O12 thin films have (117) and c-axis orientation on these substrates. Ferroelectric film-SiO2-Si structures show good C-V hysteresis curve owing to Si surface potential controlled by the D-E hysteresis. D-E hysteresis is obtained in Bi4Ti3O12 thin film prepared on Pt sheet, and the remnant polarization and the coercive force are 7.5 μC/cm2 and 72 kV/cm, respectively.Keywords
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