Jet Polishing of Semiconductors

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Abstract
A method has been developed for thinning localized regions in for examination by means of transmission electron microscopy. A jet of chlorine in methanol was used to chemically polish slices from the face. To thin specimens from the face the same reagent and apparatus were used, but a voltage was applied so that the specimen was anodic with respect to an electrode inserted in the jet. In this case the surface was free from etch pits, but yellowish surface films were formed which could be removed by a short chemical polish. is optically transparent, but if it is illuminated only with wavelengths for which it has a sufficiently large absorption coefficient, it can be arranged that significant transmission of light begins only when the material is thin enough for electron transmission. This light can be detected by a photomultiplier and the resultant signal used to automatically terminate the thinning. The principles of this method are discussed, and the equipment required for its utilization is described. Large transparent areas were produced in material of various dopings and defect contents with a 100% success rate.

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