Prediction of direct band gaps in monolayer (001) and (111) GaAs/GaP superlattices
- 3 September 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (10) , 1031-1033
- https://doi.org/10.1063/1.103556
Abstract
The bulk GaAs0.5P0.5 alloy with lattice constant a(0.5) has an indirect band gap. First-principles self-consistent pseudopotential band structure calculations show that the monolayer (GaAs)1 (GaP)1 superlattice (SL) in either the (001) or the (111) layer orientation G is also indirect if constrained epitaxially on a substrate whose lattice constant is a(0.5). However, if grown coherently on a GaAs substrate we predict that both of these SLs will have a direct band gap. This is explained in terms of the deformation potentials of the underlying materials. Predicted band offsets are given for both (001) and (111) GaP/GaAs.Keywords
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