Optical constants of various heavily doped p- and n-type silicon crystals obtained by Kramers-Kronig analysis
- 1 September 1977
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 17 (5) , 319-329
- https://doi.org/10.1016/0020-0891(77)90034-3
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Determination of effective mass values by a Kramers-Kronig analysis for variously doped silicon crystalsInfrared Physics, 1977
- Refractive Index of SiliconApplied Optics, 1971
- Silicon Optical Constants in the InfraredJournal of the Electrochemical Society, 1971
- Infrared Absorption in Heavily Doped n‐Type SiPhysica Status Solidi (b), 1969
- Refractive Indices of Germanium, Silicon, and Fused Quartz in the Far InfraredApplied Optics, 1967
- Die Temperaturabhängigkeit des Brechungsindex von SiliziumCzechoslovak Journal of Physics, 1960
- Infrared Absorption in-Type SiliconPhysical Review B, 1957
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957
- Infrared Refractive Indexes of Silicon Germanium and Modified Selenium Glass*Journal of the Optical Society of America, 1957
- Filmed Surfaces for Reflecting Optics*Journal of the Optical Society of America, 1955