Valence-band splitting in orderedP measured by polarized photoluminescence excitation spectroscopy
- 15 September 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (11) , 7232-7235
- https://doi.org/10.1103/physrevb.46.7232
Abstract
The spontaneous long-range-order-induced splitting of the valence band of P is studied by polarized near-gap-excited photoluminescence and photoluminescence excitation. The results allow a direct determination of the size of the valence-band splitting and the relative ordering of the resultant states. Values obtained for the splitting are compared with recent calculations.
Keywords
This publication has 15 references indexed in Scilit:
- Spontaneous surface-induced long-range order inP alloysPhysical Review B, 1991
- Effect of growth rate on the band gap of Ga0.5In0.5PApplied Physics Letters, 1990
- Unusual properties of photoluminescence from partially ordered Ga0.5In0.5PApplied Physics Letters, 1990
- Excitation intensity dependence of photoluminescence in Ga0.52In0.48PApplied Physics Letters, 1990
- Band-gap narrowing in ordered and disordered semiconductor alloysApplied Physics Letters, 1990
- Electronic structure and band gap of (GaP)1(InP)1(111) superlatticeSuperlattices and Microstructures, 1989
- Polarized band-edge photoluminescence and ordering inPPhysical Review Letters, 1989
- Raman study of crystalline structure and resonant behavior in (AlxGa1−x)0.5In0.5P quaternary alloysJournal of Applied Physics, 1989
- Observation of Strong Ordering inalloy semiconductorsPhysical Review Letters, 1988
- Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1987