Design of low-capacitance bond pad for high-frequency I/O applications in CMOS integrated circuits
- 7 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 293-296
- https://doi.org/10.1109/asic.2000.880752
Abstract
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This publication has 1 reference indexed in Scilit:
- Fully-integrated CMOS RF amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003