Bistable operation in semiconductor lasers with inhomogeneous excitation
- 19 February 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (4) , 167-168
- https://doi.org/10.1049/el:19810117
Abstract
Bistable operation in InP/InGaAsP/InP DH lasers with a periodic excitation stripe geometry is reported. Bistability is observed within a current range of about 10% of the threshold current for maximum value. The range strongly depends on the stripe geometry and heat sink temperature, and they are controllable.Keywords
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