Spin-dependent current transmission across a ferromagnet–insulator– two-dimensional electron gas junction
- 15 October 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (16) , 2591-2593
- https://doi.org/10.1063/1.1408270
Abstract
The importance of using a low-transmission tunnel barrier for electrical spin injection from a ferromagnetic metal to a semiconductor is experimentally tested. A set of ferromagnet–insulator–two-dimensional electron-gas device stuctures is fabricated. Spin-dependent transport is measured in both diode and potentiometric geometries. Results are compared for devices with junction resistances that vary by an order of magnitude. The spin polarization of the junction current is about 40% for high-resistance barriers, with little temperature dependence over the range 4 K< T<295 K.Keywords
This publication has 18 references indexed in Scilit:
- Theory of the detection of current-induced spin polarization in a two-dimensional electron gasPhysical Review B, 2001
- Two-Component Interference Effect: Model of a Spin-Polarized TransportPhysical Review Letters, 2001
- Oscillatory Spin-Filtering due to Gate Control of Spin-Dependent Interface ConductancePhysical Review Letters, 2001
- Hammaret al.Reply:Physical Review Letters, 2000
- Potentiometric measurements of the spin-split subbands in a two-dimensional electron gasPhysical Review B, 2000
- Transport spin polarization ofElectronic kinematics and band structurePhysical Review B, 2000
- Theory of spin-dependent transport in ferromagnet-semiconductor heterostructuresPhysical Review B, 1998
- Observation of the zero-field spin splitting of the ground electron subband in gasb-inas-gasb quantum wellsPhysical Review B, 1988
- Anisotropy and infrared response of the GaAs-AlAs superlatticePhysical Review B, 1988
- Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interfacePhysical Review B, 1988