1.3μm InGaAsP/InP distributed-feedback P -substrate partially inverted buried-heterostructure laser diode

21 May 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (11) , 546-547
https://doi.org/10.1049/el:19870392

Abstract

A novel 1.3μm InGaAsP/lnP distributed-feedback buried-heterostructure laser diode on p-type InP substrate has been developed utilising a dopant diffusion technique. The laser has achieved a threshold current as low as 20 mA and high output power of 32 mW under CW and SLM operation.

Keywords

32 MW
THRESHOLD CURRENT
OPTICAL COMMUNICATION EQUIPMENT
DOPANT DIFFUSION TECHNIQUE
INP
CW OPERATION
DISTRIBUTED-FEEDBACK BURIED-HETEROSTRUCTURE LASER DIODE
20 MA
SLM OPERATION
INGAASP-INP
1.3 MICRON
OUTPUT POWER
P-TYPE INP SUBSTRATE

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