Thermodynamic analysis of GaAs growth by molecular beam epitaxy at the surface structure transition from 3 × 1 to 4 × 2
- 1 June 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 130 (3-4) , 451-458
- https://doi.org/10.1016/0022-0248(93)90533-3
Abstract
No abstract availableThis publication has 34 references indexed in Scilit:
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