Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors
- 1 June 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 117-118, 362-372
- https://doi.org/10.1016/s0169-4332(97)80109-2
Abstract
No abstract availableKeywords
This publication has 41 references indexed in Scilit:
- Sputtered AlN encapsulant for high-temperature annealing of GaNApplied Physics Letters, 1996
- InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substratesApplied Physics Letters, 1996
- Electrical contacts to p-ZnTeJournal of Crystal Growth, 1996
- Ohmic Contacts to ZnSe-Based MaterialsCritical Reviews in Solid State and Materials Sciences, 1996
- Degradation of II-VI ZnSe-Based Single Quantum Well Light-Emitting DevicesCritical Reviews in Solid State and Materials Sciences, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- Surface Fermi level engineering: Or there is more to Schottky barriers than just making diodes and field effect transistor gatesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of GeJournal of Applied Physics, 1987
- Unpinned (100) GaAs surfaces in air using photochemistryApplied Physics Letters, 1986
- Halbleitertheorie der SperrschichtThe Science of Nature, 1938