Low-Temperature Electronic Transport Properties of Tl5Te3
- 1 December 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (13) , 5223-5226
- https://doi.org/10.1063/1.1658651
Abstract
Measurements of the electrical resistivity, transverse magnetoresistivity, and Hall effect between 4.2° and 293°K were carried out on zone‐melted Tl5Te3 single crystals, which had undergone heat treatments in different gas atmospheres. The results indicate that the electrical transport properties of Tl5Te3 are influenced by the absorbed nitrogen gas. The temperature dependence of the ideal resistivity is discussed in terms of the Grüneisen‐Bloch relation. Using a characteristic temperature θR=115°K, a rather close agreement between the computed and the experimental curves is found. The transverse magnetoresistivity at 4.2°K is positive and varies as B2. The Hall coefficient decreases with increasing temperature by about a factor of 4, remaining positive throughout the whole temperature range investigated.This publication has 8 references indexed in Scilit:
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