Schottky diode with cutoff frequency of 400 GHz fabricated in 0.18 µm CMOS

14 April 2005

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 41 (8) , 506-508
https://doi.org/10.1049/el:20050282

Abstract

TiSi₂-Si Schottky diodes for RF rectification were fabricated using a 0.18 µm CMOS process without any process modifications. These diodes are intended to be used with forward bias and small-signal amplitude. At 0 V bias, the diodes with an area of 0.45×0.45 µm² achieve a cutoff frequency of over 400 GHz. This is the highest cutoff frequency compared to that for the previously reported Schottky diodes fabricated in foundry CMOS processes. The turn-on voltage of the diodes is ∼0.30 V.

Keywords

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