Infrared internal reflection studies of the surface photochemistry of dimethylcadmium on silicon

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Abstract
An infrared spectroscopic technique employing the principle of total internal reflection has been used to examine the UV-induced surface photochemistry of dimethylcadmium on chemically altered silicon surfaces. Fourier transformed infrared spectra of both chemically and physically adsorbed molecules were recorded on oxidized and hydrogen ‘‘passivated’’ silicon surfaces (SiO2 and SiH) upon exposure to excimer laser radiation at 193 and 248 nm. By monitoring changes in the infrared spectrum of adsorbed dimethylcadmium during the irradiation process, insight into the role of the surface in the photodissociation of the adspecies is obtained.
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