Sensitivity of the universal conductance fluctuations in a GaAs microstructure to the state of a single scatterer
Open Access
- 11 September 1989
- journal article
- letter
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 1 (36) , 6507-6511
- https://doi.org/10.1088/0953-8984/1/36/018
Abstract
Discrete multilevel spontaneous resistance fluctuations have been observed in a microstructure fabricated on a delta -doped GaAs layer base. The authors suggest that this behaviour of the resistance is caused by random discrete changes of states of individual impurity atoms. They have been able to observe the influence of the change of the state of a single scatterer on the universal conductance fluctuations. Comparison with theory is made.Keywords
This publication has 6 references indexed in Scilit:
- Reduction of Quantum Noise in a GaAlAs/GaAs Heterojunction by a Magnetic Field: an Orthogonal-To-Unitary Wigner Statistics TransitionEurophysics Letters, 1989
- Defect Interactions and Noise in Metallic NanoconstrictionsPhysical Review Letters, 1988
- Anomalous telegraph noise in small-area silicon metal-oxide-semiconductor field-effect transistorsPhysical Review B, 1988
- Universal conductance fluctuations in metals: Effects of finite temperature, interactions, and magnetic fieldPhysical Review B, 1987
- Sensitivity of the Conductance of a Disordered Metal to the Motion of a Single Atom: Implications forNoisePhysical Review Letters, 1986
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984