Metal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure
- 1 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (1) , 69-71
- https://doi.org/10.1063/1.102654
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Surface structure and bonding of the cleavage faces of tetrahedrally coordinated II–VI compoundsJournal of Vacuum Science & Technology B, 1988
- Surface structure of As-stabilized GaAs(001): 2×4,c(2×8), and domain structuresPhysical Review B, 1988
- ‘‘Pinning’’ of energy levels of transition-metal impuritiesJournal of Vacuum Science & Technology B, 1987
- Schottky barriers: An effective work function modelApplied Physics Letters, 1981
- Structural Energies of A1 Deposited on the GaAs(110) SurfacePhysical Review Letters, 1981
- Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transferJournal of Vacuum Science and Technology, 1981
- Liquid phase epitaxial growth of GaAs from AuGeNi meltsSolid-State Electronics, 1977
- The metal-semiconductor interface: Si (111) and zincblende (110) junctionsJournal of Physics C: Solid State Physics, 1977
- Electronic structure of a metal-semiconductor interfacePhysical Review B, 1976
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942