Two-dimensional numerical simulation of bipolar semiconductor devices taking into account heavy doping effects and Fermi statistics
- 1 April 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (4) , 275-279
- https://doi.org/10.1016/0038-1101(83)90122-3
Abstract
No abstract availableKeywords
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