Preparation of BaF2 films by metalorganic chemical vapor deposition
- 15 December 1989
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (12) , 6179-6181
- https://doi.org/10.1063/1.343553
Abstract
To date thin films of II(a) fluorides (CaF2, BaF2, SrF2, and their mixtures) have only been deposited by physical vapor deposition techniques. We report for the first time the deposition of BaF2 films on silicon and yttrium‐stabilized zirconia substrates by metalorganic chemical vapor deposition at a substrate temperature as low as 400 °C.This publication has 1 reference indexed in Scilit:
- Preparation of Y-Ba-Cu-O superconducting thin films using BaF2 as a buffer layerApplied Physics Letters, 1989