Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition
- 15 April 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (8) , 678-679
- https://doi.org/10.1063/1.94069
Abstract
Amorphous silicon films have been prepared through mercury-photosensitized decomposition of monosilane gas at low temperatures. The films show optical and electrical properties comparable with those of the best films prepared by plasma chemical vapor deposition. The feasibility of amorphous solar cells with short-circuit current densities of more than 10 mA/cm2 has been demonstrated by fabrication of a Schottky barrier structure.Keywords
This publication has 3 references indexed in Scilit:
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979
- Amorphous silicon solar cellApplied Physics Letters, 1976
- The 3P1 Mercury-Photosensitized Decomposition of MonosilaneThe Journal of Physical Chemistry, 1964