Reactions of Silicon with Surfaces of Close-Packed Metals: Silicon on Aluminum
- 1 May 1971
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (6) , 2557-2561
- https://doi.org/10.1063/1.1660578
Abstract
The reactions of silicon with the principal surfaces of aluminum, viz., Al {100}, Al {110}, and Al {111} in their clean state, are investigated by means of the low-energy electron diffraction (LEED) technique. On Al {100}, silicon is disordered; on Al {110}, it forms an 8×2 superstructure; on Al {111}, it forms a 3×3 superstructure. The experiments prove that, upon heating, silicon diffuses into the bulk aluminum lattice very rapidly at temperatures slightly higher than ambient. Structural models are proposed for the ordered structures which lead to the prediction of a √3−30° structure of Si on Ni {111} and Be {0001}.This publication has 25 references indexed in Scilit:
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