Electron leakage and the excess voltage at p-P heterojunctions in InGaAsP/InP lasers

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23 November 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1997.650406

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Analysis of gain in determining T/sub 0/ in 1.3 μm semiconductor lasers
IEEE Journal of Selected Topics in Quantum Electronics, 1995
Carrier transport in laser heterostructures
IEEE Journal of Quantum Electronics, 1994
Boundary conditions for pn heterojunctions
Solid-State Electronics, 1984