Shape of the p-n junction and crystalline structure of CuxS-CdS thin-film solar cells
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (4) , 1538-1542
- https://doi.org/10.1063/1.323874
Abstract
CuxS‐CdS solar cells, prepared by the Clevite process, were bevelled at an angle of 40′ and suitably etched to expose grains of CdS, cracks, and the junction region. SEM pictures of this region reveal the average grain size and the distance between the cracks to be about 0.5 and 2 μm, respectively. Cathodoluminescence and SEM studies of the bevelled region of the cells show that the thickness of the CuxS layer perpendicular to the surface is highly nonuniform and thus forms vertical junctions. With the help of simple expressions it was shown that the reduction of the open‐circuit voltage is a natural outcome, if the vertical parts of the junction are considered. It was also pointed out that there may be an optimum grain size of the CdS crystallites to obtain maximum power output from the cell.This publication has 8 references indexed in Scilit:
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