GaAs based anti-resonant Fabry–Perot saturable absorber fabricated by metal organic vapor phase epitaxy and ion implantation
- 23 June 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (25) , 3428-3430
- https://doi.org/10.1063/1.119192
Abstract
We have fabricated an antiresonant Fabry–Perot saturable absorber (A-FPSA), for potential use in laser passive mode locking, using metalorganic vapor phase epitaxy followed by ion implantation and thermal annealing. We show that the implantation/annealing cycle shortens the free-carrier dwell time without degrading the other optical properties of the A-FPSA.Keywords
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