Hydrides and Hydroxyls in Thin Silicon Dioxide Films

1 January 1971

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 118 (4) , 614-619
https://doi.org/10.1149/1.2408122

Abstract

Determinations of the hydroxyl content of anodically and thermally grown silicon dioxide films by internal reflection spectroscopy in the infrared show that hydroxyl and silicon hydride are already incorporated into these films during their formation. The concentration, as well as the distribution, of these compounds within freshly formed anodic and thermal films is given.

Keywords

THIN FILMS
SILICON COMPOUNDS
INFRARED SPECTROSCOPY
ANODISED LAYERS
THERMAL PROPERTIES
INTERNAL REFLECTION SPECTROSCOPY
THERMAL SILICON DIOXIDE FILMS
ANODIC SILICON DIOXIDE FILMS
QUANTITATIVE DETERMINATION OF HYDROXYL CONTENT

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