Kinetics of Thermal Growth of HCl-0[sub 2] Oxides on Silicon
- 1 January 1973
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 120 (11) , 1595-1601
- https://doi.org/10.1149/1.2403311
Abstract
Growth kinetics at 1100° are investigated as a function of mole ratio below 10% for (111), (100), (311), and (110) oriented wafers. It is concluded that the considerable increase of the oxidation rate in the presence of is caused by three reasons: The first is enhanced diffusion of O2 and molecules in the oxide. The second is enhanced reactions at the interface, resulting from a catalytic action of . The third is the contribution of to the oxidation, which is formed by the reaction, . The diffusivity of O2 and molecules in the oxide was measured by a technique which is based on dry or wet oxidation after an initial growth. Infrared spectroscopy of the output gas from the furnace and the observation of the interface through a microscope and secondary electron microscope revealed the nature of the enhanced reactions, which are closely related to gaseous etching of Si.Keywords
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