Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors
- 7 February 2006
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 17 (5) , 1264-1271
- https://doi.org/10.1088/0957-4484/17/5/018
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Photoconduction studies on GaN nanowire transistors under UV and polarized UV illuminationChemical Physics Letters, 2004
- Electronic Detection of Specific Protein Binding Using Nanotube FET DevicesNano Letters, 2003
- Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic NanodevicesNano Letters, 2003
- Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect TransistorsNano Letters, 2002
- High-Mobility Nanotube Transistor MemoryNano Letters, 2002
- Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-depositionApplied Physics Letters, 2002
- Gallium Nitride Nanowire NanodevicesNano Letters, 2002
- GaN ElectronicsAdvanced Materials, 2000
- Room-temperature transistor based on a single carbon nanotubeNature, 1998
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994