Improved very-high-speed packaged InGaAs PIN punch-through photodiode

28 March 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (7) , 262-263
https://doi.org/10.1049/el:19850186

Abstract

We describe the fabrication and characterisation of an improved, coaxially packaged, back-illuminated mesa PIN photodetector utilising an InGaAs absorbing layer on an InP substrate. The measured 3 dB bandwidth is 22 GHz.

Keywords

CHARACTERISATION
FABRICATION
MESA PIN PHOTODETECTION
INGAAS PIN PUNCH-THROUGH PHOTODIODE
INP SUBSTRATE
COAXIAL PACKAGING
INGAAS ABSORBING LAYER
BANDWIDTH 22 GHZ