Theoretical study of Ga4As4, Al4P4, and Mg4S4 clusters
- 1 June 1993
- journal article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 98 (11) , 8770-8776
- https://doi.org/10.1063/1.464485
Abstract
Ab initio molecular orbital investigations of the electronic structures, bonding, and stabilities of Ga4As4, Al4P4, and Mg4S4 are reported. The effects of polarization functions and electron correlation are included in these calculations. Our results indicate that the electronegativity difference between the constituents of a mixed cluster plays a very important role in determining its ground state structure. In A4B4 mixed clusters, a distorted cubic structure with alternating atomic charges leads to a particularly stable ionic form. This Td structure consisting of two interpenetrating tetrahedra of the two constituents is the ground state structure for both Al4P4 and Mg4S4. For Ga4As4, there also exists a more covalent Si8-like Ci structure that is 3 kcal/mole more stable than the Td form. The structures and relative stabilities of these mixed clusters are compared with the results for valence-isoelectronic Si8 and Na4Cl4 clusters.Keywords
This publication has 49 references indexed in Scilit:
- Electronic structure of small GaAs clusters. IIThe Journal of Chemical Physics, 1992
- III-V semiconductor microclusters: Structures, stability, and meltingPhysical Review B, 1992
- Theoretical study of small aluminum phosphide and magnesium sulfide clustersThe Journal of Chemical Physics, 1992
- A b i n i t i o theoretical study of small GaAs clustersThe Journal of Chemical Physics, 1991
- Electronic structure of small GaAs clustersThe Journal of Chemical Physics, 1991
- Transferability of bulk empirical potentials to silicon microclusters: A critical studyPhysical Review B, 1990
- Spectroscopy and electronic structure of jet-cooled GaAsThe Journal of Chemical Physics, 1990
- Mass transfer and surface reaction in the growth and etching of GaAs(s)Journal of Crystal Growth, 1989
- Reactive etching of GaxAs−y by HClThe Journal of Chemical Physics, 1989
- Electronic states of GaAs and GaAs+The Journal of Chemical Physics, 1987