High microwave performance ion-implanted GaAs MESFETs on InP substrates
- 1 February 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (3) , 197-199
- https://doi.org/10.1049/el:19900133
Abstract
Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2µm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300cm2/Vs with a carrier density of 2 × 1017cm−3 at room temperature. The MESFET (0.8 µm gate length) exhibited a current-gain cutoff frequency of 25GHz and a maximum frequency of oscillation of 53GHz, the highest values yet reported for GaAs MESFETs on InP substrates. These results demonstrate the high potential of ionimplanted MESFETs as electronic devices for high-speed InP-based OEICs.Keywords
This publication has 0 references indexed in Scilit: