In order to investigate the resistivity fluctuations associated with striations in silicon crystals, the silicon surface was supplied with an arrangement of closely spaced (10 µm) nonblocking aluminum-silicon contacts. The resistivity was measured using a Wheatstone bridge technique. In addition, we used the aluminum-silicon contacts for spreading resistance measurements. Measurements with aluminum-silicon contacts can be repeated, e.g., to demonstrate reproducibility. This is in contrast to the methods using a sequence of direct contacts between the metal probe and the silicon surface.