The effect of laser annealing on the critical-current density in Nb3Ge
- 1 August 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (3) , 277-279
- https://doi.org/10.1063/1.92671
Abstract
Pulse laser annealing of Nb‐Ge superconducting films grown by chemical vapor deposition produces an increase in critical‐current density, Jc, if the atomic ratio Nb/Ge is less than three. This Jc increase is caused by flux pinning on the nucleated Nb5Ge3(σ) second‐phase particles rather than on grain boundaries in the melted and resolidified surface layer. This resolidified layer is amorphous or highly disordered.Keywords
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