Amorphous Semiconductors as Undulatorily Graded Band-Gap Systems
- 2 November 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 25 (18) , 1275-1278
- https://doi.org/10.1103/physrevlett.25.1275
Abstract
We propose as a model of some amorphous semiconductors a system with undulations in composition or structure on a scale within the range of validity of the graded bandgap concept. Electronic states well within allowed bands are determined by perturbative analysis; states near band edges, by a modification of an effective-mass analysis. Localized states are obtained and the band edge identified as the locus of classical turning points of the effective mass functions.Keywords
This publication has 14 references indexed in Scilit:
- Review of the theory of amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- On the energy spectrum of vitreous arsenic sulphideJournal of Non-Crystalline Solids, 1970
- Effects of impurities on the electrical conductivity of glassy seleniumJournal of Non-Crystalline Solids, 1970
- Electronic structure and transport in covalent amorphous semiconducting alloysJournal of Non-Crystalline Solids, 1970
- Polaronic effects in potassium vanadium phosphate glassesJournal of Non-Crystalline Solids, 1970
- Electron microscopic observations of thermally induced transoformations in amorphous chalcogenide thin filmsJournal of Non-Crystalline Solids, 1970
- Simple Band Model for Amorphous Semiconducting AlloysPhysical Review Letters, 1969
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969
- Theory of Electronic States and Transport in Graded Mixed SemiconductorsPhysical Review B, 1969
- Electrons in disordered structuresAdvances in Physics, 1967