Characterisation of n -channel germanium MOSFET with gate insulator formed by high-pressure thermal oxidation

2 January 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (1) , 8-10
https://doi.org/10.1049/el:19870006

Abstract

N-channel Ge MOSFETs are fabricated with the use of a double-layer gate oxide consisting of electron beam evaporated SiO₂ over a native GeO₂ oxide, formed by highpressure thermal oxidation. Interface properties of the MOS structure, determined by capacitance/voltage and mobility measurements, are shown to be suitable for FET devices.

Keywords

NATIVE OXIDES
GATE INSULATOR
MOS STRUCTURE
DOUBLE-LAYER GATE OXIDE
INTERFACE PROPERTIES
CAPACITANCE/VOLTAGE MEASUREMENTS
ELECTRON BEAM EVAPORATION
GE-GEO2-SIO2
HIGH-PRESSURE THERMAL OXIDATION
MOBILITY MEASUREMENTS
MOSFET
N-CHANNEL

This publication has 1 reference indexed in Scilit:

The High Temperature Oxidation of Germanium
Published by University of Pennsylvania Press ,1957