The growth of tin oxide films at room temperature
- 15 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (12) , 833-835
- https://doi.org/10.1063/1.90683
Abstract
This report outlines the growth of highly transparent films of undoped tin oxide at near ambient temperatures (∼30 °C). Films were deposited by a technique based on the reaction of rf plasma‐activated oxygen with tetramethyltin. Growth rates as high as 160 Å/min have been achieved with a 100‐μm partial pressure of tetramethyltin and an overall system pressure of 500 μm. The growth kinetics have been explained by a model in which the tetramethyltin is the rate limiter, and the concentration of active oxygen is independent of the flow rate of molecular oxygen.Keywords
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