Metal-Semiconductor Barrier-Height Measurement by the Differential Capacitance Method—Degenerate One-Carrier System
- 1 November 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (11) , 3351-3353
- https://doi.org/10.1063/1.1713221
Abstract
An expression is derived for the differential capacitance of a metal contact to a semiconductor in which the bulk free carrier density is degenerate or near degenerate. A significant correction to the nondegenerate theory may be required for accurate measurement of the barrier height.This publication has 8 references indexed in Scilit:
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