Effect of Electrical Conductivity of Substrate on RF-Sputter-Deposition of µc-Si:H at -180°C

1 November 1983

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 22 (11A) , L748
https://doi.org/10.1143/jjap.22.l748

Abstract

The µc-Si:H was fabricated by the reactive RF-sputtering technique onto low temperature substrate (-180°C). It has been found that the electrical conductivity of the substrate plays a significant role in the fabrication of µc-Si:H, i.e., the –SiH₃ rich µc-Si:H is produced on the insulating substrate but the –SiH₂– rich one on the conductive substrate. The substantial effect of the electrical conductivity of the substrate is assumed to be that the screening potential by the accumulated electric charge on the insulating substrate reduced the kinetic energy of ions which impinge onto the substrate.

Keywords

This publication has 1 reference indexed in Scilit:

Fabrication of Si:H Alloy with Plenty of –SiH₃ by Reactive Sputtering onto Low Temperature Substrate
Japanese Journal of Applied Physics, 1983