InP/GaInAsP Buried Heterostructure Lasers of 1.5 µm Region
- 1 April 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (4) , L218
- https://doi.org/10.1143/jjap.19.l218
Abstract
The buried-heterostructure, in which the quaternary active layer is completely surrounded by InP crystal, has been realized in 1.5 µm region by low temperature liquid phase epitaxial growth. Low threshold current of 25 mA under CW operation was achieved at 26°C. This is the lowest value so far reported on the InP/GaInAsP laser in 1.5 µm wavelength region.Keywords
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