Damage Evolution in Al-implanted 4H SiC

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 869-872
• https://doi.org/10.4028/www.scientific.net/msf.338-342.869

Abstract

Keywords

• ANNEALING
• CHANNELING
• DEFECT KINETICS
• DOSE DEPENDENCE
• IMPLANTATION TEMPERATURE
• RBS
• SELF-INTERSTITIAL
• TEM
• VACANCY