Influence of Various Dopants on Electrical and Optical Properties of Amorphous Ge0.42 S0.58
- 1 December 1976
- journal article
- research article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 41 (6) , 2030-2036
- https://doi.org/10.1143/jpsj.41.2030
Abstract
Electrical and optical properties have been studied on Ge 0.42 S 0.58 glasses containing a series of elements with different valencies. The glass containing a small amount of Cu or Ag brings about a large increase in the d. c. conductivity with a decrease of the activation energy, and brings about a slight decrease of the optical gap and an increase of the steepness of the optical absorption edge. These results are explained by the decrease of a range of the localized states due to a reduction of disorder in the glass-structure. The glasses containing Zn, Cd, Al, In or I have not shown such behaviors. These elements are considered to tend to be incorporated in the glass-network without reducing the disorder in the parent glass.Keywords
This publication has 13 references indexed in Scilit:
- Influence of Mn Impurity in Te-As-Ge-Si GlassesJapanese Journal of Applied Physics, 1976
- Optical Properties of Amorphous SemiconductorsPublished by Springer Nature ,1974
- Structural disorder and the urbach edgeSolid State Communications, 1973
- ESR in GeS glassesSolid State Communications, 1973
- Electrical Properties of Silver Doped As-Se GlassesJapanese Journal of Applied Physics, 1972
- Glass‐Forming Regions and Structure of Glasses in the System Ge‐SJournal of the American Ceramic Society, 1969
- Simple Band Model for Amorphous Semiconducting AlloysPhysical Review Letters, 1969
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Electrical Properties of Pseudo-binary Systems of Ag2VI's; Ag2TexSe1-x, Ag2TexS1-x, and Ag2SexS1-xJournal of the Physics Society Japan, 1960