The properties of poly‐(methyl methacrylate), a new electron resist developed at IBM Research, are presented in comparison to commercial photoresists under electron beam exposure. It is shown that methacrylate resist, with suitable processing, presents a means for submicron device fabrication with reasonable speed. Transistors with one‐ and half‐micron emitter stripe widths have been fabricated using this resist as a medium for diffusion masking with . Also, a method for producing high‐resolution, defect‐free masks through methacrylate resist is presented.