Determination of the energy barrier for structural relaxation in amorphous Si and Ge by Raman scattering
- 1 May 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 54 (5) , 447-450
- https://doi.org/10.1016/0038-1098(85)90947-0
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Vibrational Spectrum and Order of Laser-Quenched Amorphous SiliconPhysical Review Letters, 1984
- Relationship between bond angle disorder and the optical edge of aGe:HSolid State Communications, 1984
- Calculation of phonon density of states for amorphous SiSolid State Communications, 1984
- Ordering of amorphous germanium prior to crystallizationPhysical Review B, 1983
- Order parameters in a-Si systemsSolid State Communications, 1983
- Temperature dependence of silicon Raman linesApplied Physics Letters, 1982
- Raman scattering and phonon dispersion in Si and GaP at very high pressurePhysical Review B, 1975
- Second-Order Raman Spectrum of GermaniumPhysical Review B, 1973
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970